Paper
18 June 2004 Period-one oscillations in optically injected semiconductor lasers
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Abstract
The characteristics of period-one oscillations in semiconductor lasers subject to optical injection is experimentally and quantitatively investigated. The changes in the frequency separation and in the magnitude difference between the principal oscillation and the sideband of the injected laser are studied as a function of experimentally accessible parameters, the detuning frequency and the injection strength of the injection signal. The frequency separation decreases as the injection strength and the detuning frequency decrease. The magnitude of the principal oscillation decreases with the decreasing injection strength and the increasing detuning frequency, while that of the sideband grows at the same time. At some operating conditions, these characteristics leads to a situation that the magnitude of the sideband becomes larger than that of the original principal oscillation, resulting in a frequency shift of the principal oscillation from the injection frequency to the sideband.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng Kwang Hwang, Jia Ming Liu, and J. Kenton White "Period-one oscillations in optically injected semiconductor lasers", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.529569
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KEYWORDS
Semiconductor lasers

Laser optics

Chaos

Laser systems engineering

Modulation

Spectrum analysis

Stereolithography

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