Analysis of InGaAs metal-semiconductor-metal OE mixers

Paul H. Shen; Keith Aliberti; Barry Stann; Peter G. Newman; Rishabh Mehandru; Fan Ren

doi:10.1117/12.527487

18 June 2004 Analysis of InGaAs metal-semiconductor-metal OE mixers

Paul H. Shen, Keith Aliberti, Barry Stann, Peter G. Newman, Rishabh Mehandru, Fan Ren

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.527487
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We analyze the optoelectronic mixing characteristics of InAlAs, Schottky-enhanced, InGaAs-based, metal-semiconductor-metal photodetectors. For devices with Schottky-enhancement layers (SELs) of about 500 Å, the measured frequency bandwidth is less than that of a corresponding photodetector. The mixing efficiency decreases with decrease in optical power, decreases with increase in local oscillator frequency and decreases with decrease in mixed signal frequency. We attribute this behavior to the band-gap discontinuity associated with the SEL. For devices with thinner SELs (≈100 Å), the mixing characteristics are greatly improved: the bandwidth of the optoelectronic mixer (OEM) is similar to that of a corresponding photodetector and the mixing efficiency decreases only slightly with decrease in optical power. We attribute these results to the enhancement of the thermionic/tunneling current through the thinner SEL. We also present a circuit model of the Schottky-enhanced, InGaAs-based OEM to explain the experimental results.

Citation Download Citation

Paul H. Shen, Keith Aliberti, Barry Stann, Peter G. Newman, Rishabh Mehandru, and Fan Ren "Analysis of InGaAs metal-semiconductor-metal OE mixers", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.527487

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