Modulation-doped InGaAsP quantum well laser and modulator

Niloy K. Dutta; Niloy Choudhury; Guanghao Zhu; Hong Cong

doi:10.1117/12.513627

14 August 2003 Modulation-doped InGaAsP quantum well laser and modulator

Niloy K. Dutta, Niloy Choudhury, Guanghao Zhu, Hong Cong

Proceedings Volume 5246, Active and Passive Optical Components for WDM Communications III; (2003) https://doi.org/10.1117/12.513627
Event: ITCom 2003, 2003, Orlando, Florida, United States

Abstract

An number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise in modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 μm have been theoretically investigated. The results indicate that the relaxation oscillation frequency for p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers. The linewidth enhancement factor of p-type modulation doped QW laser is reduced to ½ of that of undoped MQW laser and the relative intensity noise (RIN) is reduced by a factor of > 10 dB compared to that for undoped MQW lasers.

Citation Download Citation

Niloy K. Dutta, Niloy Choudhury, Guanghao Zhu, and Hong Cong "Modulation-doped InGaAsP quantum well laser and modulator", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); https://doi.org/10.1117/12.513627

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