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In order to obtain specific channels and reservoirs in glass for analytic systems, the structuring of borosilicate glass has been studied. We used wet etching in HF diluted solution for etching channels up to 150 μm depth. A mask obtained by successively wet etching of previously evaporated Au and Cr layers has been used. A thick SJR 5740 type resist has been spun-on in order to accomplish the optical transfer of the pattern. A normal underetching not larger than the depth, has been obtained when adding a small amount of nitric acid, and using an appropriate annealing process after metal deposition. Neither pinholes nor cracks have been noticed after getting an etching depth of 180 μm. Double side etching has been performed for penetrating the glass. The dependence of the etching rate vs. both HF and HNO3 concentration is outlined together with the etched surface quality.
Mihaela Ilie,Vittorio Foglietti,Elena Cianci, andAntonio Minotti
"Optimized deep wet etching of borosilicate glass through Cr-Au-resist mask", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520071
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Mihaela Ilie, Vittorio Foglietti, Elena Cianci, Antonio Minotti, "Optimized deep wet etching of borosilicate glass through Cr-Au-resist mask," Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520071