Paper
30 September 2003 Design of based silicon waveguide reflective modulators
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Abstract
In this work a few configurations of waveguide reflective modulators are studied theoretically. The waveguides considered here are made from epitaxial silicon layer grown on heavy doped silicon substrate. The working wavelength is 1.3 µm. The optimal configuration of the proposed devices was obtained using the optical analysis.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kusko "Design of based silicon waveguide reflective modulators", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520116
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KEYWORDS
Waveguides

Modulators

Silicon

Reflectivity

Absorption

Doping

Modulation

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