The 667.7-nm optogalvanic effect signal in argon hollow cathode discharge

Sanka V. Gateva; M. Janossy

doi:10.1117/12.519395

4 November 2003 The 667.7-nm optogalvanic effect signal in argon hollow cathode discharge

Sanka V. Gateva, M. Janossy

Proceedings Volume 5226, 12th International School on Quantum Electronics: Laser Physics and Applications; (2003) https://doi.org/10.1117/12.519395
Event: 12th International School on Quantum Electronics Laser Physics and Applications, 2002, Varna, Bulgaria

Abstract

The optogalvanic signals (OGS) at 667.728 nm (the 1s₄-2p₁) Ar transition in pure Ar and He:Ar=1:1 mixture have been investigated with a low power diode laser in a longitudinal hollow cathode discharge. Qualitative explanation of the formation of the 667.7 nm Ar OGS is proposed. A simple model for explanation of the dependence of the 667.728 nm Ar OGS amplitude and sign along the cross-section of the discharge tube is applied. The OGS in pure Ar and HE:Ar = 1:1 mixture gas discharge are compared.

Citation Download Citation

Sanka V. Gateva and M. Janossy "The 667.7-nm optogalvanic effect signal in argon hollow cathode discharge", Proc. SPIE 5226, 12th International School on Quantum Electronics: Laser Physics and Applications, (4 November 2003); https://doi.org/10.1117/12.519395

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