Deformation of silicon surfaces

John C. Lambropoulos; Kang-Hua Chen; Theodore J. Lambropoulos

doi:10.1117/12.506332

12 December 2003 Deformation of silicon surfaces

John C. Lambropoulos, Kang-Hua Chen, Theodore J. Lambropoulos

Proceedings Volume 5179, Optical Materials and Structures Technologies; (2003) https://doi.org/10.1117/12.506332
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Processing of semiconductors, including machining, grinding, or polishing, involves thermomechanical deformation of a thin surface layer, thus coupling temperature and stress fields. Si, Ge, and other III-V semiconductors, exhibit complex constitutive laws coupling mechanical deformation with an evolving microstructure, typically dislocation density or coordination number. Irreversible shear flow and phase transitions are induced by combined stresses and temperatures. We discuss constitutive laws applicable to the machining of silicon.

Citation Download Citation

John C. Lambropoulos, Kang-Hua Chen, and Theodore J. Lambropoulos "Deformation of silicon surfaces", Proc. SPIE 5179, Optical Materials and Structures Technologies, (12 December 2003); https://doi.org/10.1117/12.506332

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