Paper
6 October 2003 Microwave modulation characteristics of a dual-frequency laser diode
Takehiko Hidaka, Hiromasa Ito, Isao Morohashi, Hisasshi Shimura
Author Affiliations +
Proceedings Volume 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems; (2003) https://doi.org/10.1117/12.517990
Event: International Conference on Lasers, Applications, and Technologies 2002, 2002, Moscow, Russian Federation
Abstract
Abnormal modulation characteristics of a DBR-type dual-frequency laser diode will be reported. Applying strong but relatively low frequency (less than 3.5GHz) microwaves on a dual-frequency LD, average output power of the short-wavelength oscillation of the LD was enhanced, and the long-wavelength oscillation line was suppressed. With increasing microwave injection frequency up to 4GHz, the situation was reversed; namely the short-wavelength oscillation was suppressed and the long-wavelength oscillation was enhanced. Much higher frequency (over 4.5GHz), the situation was reverted to the low-frequency area.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takehiko Hidaka, Hiromasa Ito, Isao Morohashi, and Hisasshi Shimura "Microwave modulation characteristics of a dual-frequency laser diode", Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); https://doi.org/10.1117/12.517990
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KEYWORDS
Microwave radiation

Semiconductor lasers

Modulation

Spectroscopy

Terahertz radiation

Continuous wave operation

Laser damage threshold

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