Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures

Anatolij A. Druzhinin; I. P. Ostrovskii; Elena Lavitska; Natalya Liakh; Tomasz Palewski

doi:10.1117/12.519666

22 October 2003 Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures

Anatolij A. Druzhinin, I. P. Ostrovskii, Elena Lavitska, Natalya Liakh, Tomasz Palewski

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519666
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The present paper deals with studies of deformation influence on Ge_xSi_1-x (x = 0.01 ÷ 0.03) whiskers conduction in the temperature range 4.2 ÷ 300 K. The whiskers were grown by chemical vapor deposition method in a sealed bromide system with use of Au and B dopants. The whiskers with resistivity ρ = 0.005 ÷ 0.025 Ω•cm were investigated. The values of resistivity corresponded to the impurity concentrations in the vicinity of the metal-insulator transition. The strain was imposed by the whisker mounting on specially selected substrates (quartz, copper, aluminum) with thermal expansion coefficient different from that in Si-Ge material. The 'giant' piezoresistance was found in the specimens at cryogenic temperatures. Estimated longitudinal gauge factor G <111> = Δρ/(ρ_oε) is equal to 10.000 ÷ 30.000 at 4.2 K in the whiskers with resistivity ρ = 0.012 ÷ 0.018 Ω•cm. From σ = f(1/T) curves activation energies for the hopping conductance in the whiskers have been calculated. Possible reasons of the obtained phenomena are discussed.

Citation Download Citation

Anatolij A. Druzhinin, I. P. Ostrovskii, Elena Lavitska, Natalya Liakh, and Tomasz Palewski "Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519666

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