Comparative study between REAP 200 and FEP171 CAR with 50 kV raster e-beam system for sub-100-nm technology

Ki-Ho Baik; Homer Y. Lem; Robert L. Dean; Stephen Osborne; Mark Mueller; Frank E. Abboud

doi:10.1117/12.504186

28 August 2003 Comparative study between REAP 200 and FEP171 CAR with 50-kV raster e-beam system for sub-100-nm technology

Ki-Ho Baik, Homer Y. Lem, Robert L. Dean, Stephen Osborne, Mark Mueller, Frank E. Abboud

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504186
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

In this paper, a process established with a positive-tone chemically amplified resist (CAR) from TOK REAP200 and Fujifilm Arch FEP171 and 50kV MEBES system is discussed. This TOK resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. In the mask industries, the most popular positive tone CAR is FEP171, which is a high activation energy type CAR. REAP (Raster E-beam Advanced Process) 200 is low activation energy type and new acetal protecting polymer. In this study, we compared to these different type resists in terms of contrast, PAB and PEB latitude, resist profile, footing, T-topping, PED stability, LER, Global CDU (Critical Dimension Uniformity) and resolution. The REAP200 Resist obtained 75nm isolated lines and spaces, 90nm dense patterns with vertical profile, and a good stability of delay time.

Citation Download Citation

Ki-Ho Baik, Homer Y. Lem, Robert L. Dean, Stephen Osborne, Mark Mueller, and Frank E. Abboud "Comparative study between REAP 200 and FEP171 CAR with 50-kV raster e-beam system for sub-100-nm technology", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504186

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