The 4x288 linear FPA on the heteroepitaxial Hg<sub>1-x</sub>Cd<sub>x</sub>Te base

Yu. P. Derkach; C A. Dvoretski; A. G. Golenkov; A. G. Klimenko; A. I. Kozlov; I. V. Marchishin; V. N. Ovsyuk; V. P. Reva; Yu. G. Sidorov; F. F. Sizov; A. O. Suslyakov; N. Ch. Talipov; V. V. Vasilyev; T. I. Zahar'yash; V. V. Zabudsky

doi:10.1117/12.517243

30 September 2003 The 4×288 linear FPA on the heteroepitaxial Hg_1-xCd_xTe base

Yu. P. Derkach, C A. Dvoretski, A. G. Golenkov, A. G. Klimenko, A. I. Kozlov, I. V. Marchishin, V. N. Ovsyuk, V. P. Reva, Yu. G. Sidorov, F. F. Sizov, A. O. Suslyakov, N. Ch. Talipov, V. V. Vasilyev, T. I. Zahar'yash, V. V. Zabudsky

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517243
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

x4×288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28×25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and have cutoff wavelength λ_co ≈ 11.8 μm at T = 78 K. To decrease the surface influence of the carriers recombination processes the layers with composition changes and its increase both toward the surface and HgCdTe/CdZnTe boundary were grown. Silicon read-outs with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure to qualify read-out integrated circuits (ROICs) on wafer level at T = 300 K was worked out. The silicon read-outs for 4×288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. Designed CCD readouts are driven with four- or two-phase clock pulses. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4×288 MCT n-p-junctions, the detectivity was about (formula available in paper) for background temperature T_b = 295 K.

Citation Download Citation

Yu. P. Derkach, C A. Dvoretski, A. G. Golenkov, A. G. Klimenko, A. I. Kozlov, I. V. Marchishin, V. N. Ovsyuk, V. P. Reva, Yu. G. Sidorov, F. F. Sizov, A. O. Suslyakov, N. Ch. Talipov, V. V. Vasilyev, T. I. Zahar'yash, and V. V. Zabudsky "The 4×288 linear FPA on the heteroepitaxial Hg_1-xCd_xTe base", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517243

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available