Progress in GaN-based materials and optical devices

Ivars Melngailis

doi:10.1117/12.517027

8 August 2003 Progress in GaN-based materials and optical devices

Ivars Melngailis

Proceedings Volume 5123, Advanced Optical Devices, Technologies, and Medical Applications; (2003) https://doi.org/10.1117/12.517027
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Recent advances in the epitaxial growth of GaN and its alloys with Al and In have led to major improvements in the performance of short-wavelength visible and UV diode lasers and solar-blind detectors for UV wavelengths. A decrease in defect densities to less than 10⁶ cm^-2 by an epitaxial lateral overgrowth technique has enabled the fabrication of 405-nm InGaN lasers emitting 30 mW continuously with 15000-h lifetimes. Laser wavelength coverage has been extended to 366 nm in the UV. Initial results in the development of quantum dot lasers have been reported and active mode locking of 409-nm lasers has yielded 30-ps-long pulses, of interest for frequency upconversion. AlGaN photodiodes with a band-edge wavelength of 285 nm, appropriate for solar-blind detection, have been fabricated and low dark-current densites (10 nA/cm² at -5-V bias) have ben reported. Gains of 10 when operated in the linear mode and gains of ~10⁶ in Geiger-mode operation have been obtained in GaN avalanche photodiodes.

Citation Download Citation

Ivars Melngailis "Progress in GaN-based materials and optical devices", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); https://doi.org/10.1117/12.517027

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