Enhanced intensity fluctuations in a laser diode subject to optical feedback

Yanhua Hong; Cristina Masoller; Rai Ju; Sujit Bandyopadhyay; Siva Sivaprakasam; Paul S. Spencer; Keith Alan Shore

doi:10.1117/12.497232

16 May 2003 Enhanced intensity fluctuations in a laser diode subject to optical feedback

Yanhua Hong, Cristina Masoller, Rai Ju, Sujit Bandyopadhyay, Siva Sivaprakasam, Paul S. Spencer, Keith Alan Shore

Proceedings Volume 5111, Fluctuations and Noise in Photonics and Quantum Optics; (2003) https://doi.org/10.1117/12.497232
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

The effects of optical feedback in edge-emitting semiconductor lasers and vertical cavity surface emitting lasers (VCSELs) have attracted considerable attention because the characteristics of both kind of lasers are very sensitive to the effects of reflected light. The phenomena arising in laser diodes subject to optical feedback can be classified according to operating five regimes conventionally identified as regimes I-V. Optical feedback also affects the noise properties of semiconductor lasers. There have been a number of investigations of the noise properties of semiconductor lasers and VCSELs subject to optical feedback. However, such work has been concerned with only some of the above-mentioned regimes of operation. A thorough experimental investigation of the effect of optical feedback in RIN of edge-emitting semiconductor lasers has yet to appear in the literature. In this paper, we present a detailed study of the effect of optical feedback on the average RIN of edge-emitting semiconductor lasers at different bias currents. An experimental study has been performed of the relative intensity noise (RIN) of a semiconductor laser in optical feedback regimes I to V. At low bias current, a low RIN is observed with low feedback feedback ratio, the RIN increased in the coherence collapse regime, then decreased again in regime V. The RIN in regime V is lower than that of the solitary laser. It is observed experimentally that an increase of the RIN occurs for intermediate levels of feedback. Such an increase in RIN appears to be related to enhanced intensity fluctuations. We will consider theoretical approaches to explaining the observed RIN characteristics.

Citation Download Citation

Yanhua Hong, Cristina Masoller, Rai Ju, Sujit Bandyopadhyay, Siva Sivaprakasam, Paul S. Spencer, and Keith Alan Shore "Enhanced intensity fluctuations in a laser diode subject to optical feedback", Proc. SPIE 5111, Fluctuations and Noise in Photonics and Quantum Optics, (16 May 2003); https://doi.org/10.1117/12.497232

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KEYWORDS

Semiconductor lasers

Edge emitting semiconductor lasers

Vertical cavity surface emitting lasers

Coherence (optics)

Laser optics

Laser damage threshold

Reflectivity

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