Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates

Ronald N. Vallejo; Sang-Ho Yun; Judy Z. Wu; Meimei Z. Tidrow; H. Braaten; C. Hansen; P. Adrent

doi:10.1117/12.511996

10 October 2003 Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates

Ronald N. Vallejo, Sang-Ho Yun, Judy Z. Wu, Meimei Z. Tidrow, H. Braaten, C. Hansen, P. Adrent

Author Affiliations +

Proceedings Volume 5074, Infrared Technology and Applications XXIX; (2003) https://doi.org/10.1117/12.511996
Event: AeroSense 2003, 2003, Orlando, Florida, United States

Abstract

Pb(Zr,Ti)O₃ (PZT), a promising material for uncooled infrared detection, is an anisotropic perovskite with the best pyroelectric effect observed along the c-axis. Although c-axis orientated PZT films can be easily obtained on single crystal substrates with minimal lattice mismatch, it remains a challenge in practical cases when they must be grown on non-textured polymer based sacrificial coatings over Si substrates. To address this issue, we have been focused on development of thin textured MgO templates on non-textured substrates, such as amorphous SiO₂/Si and polymer coated SiO₂/Si, using an ion-beam-assisted deposition (IBAD) technique. C-axis-oriented multi-layered LaNiO₃/Pb(Zr,Ti)O₃/LaNiO₃ have been achieved and the ferroelectric properties, that impact the figure of merit for IR sensors, have been characterized.

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Ronald N. Vallejo, Sang-Ho Yun, Judy Z. Wu, Meimei Z. Tidrow, H. Braaten, C. Hansen, and P. Adrent "Effect of in-plane and out-of-plane misorientation on the ferroelectric properties of thin film ferroelectric PZT infrared sensors on Si substrates", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); https://doi.org/10.1117/12.511996

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