Crystallization in eutectic materials of phase-change optical memory

Masahiro Okuda; Hirokazu Inaba; Shouji Usuda

doi:10.1117/12.510288

9 April 2003 Crystallization in eutectic materials of phase-change optical memory

Masahiro Okuda, Hirokazu Inaba, Shouji Usuda

Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510288
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China

Abstract

For the materials of eutectic composition (AgInSbTe) using as the phase change optical memory, Sb rich recording layer have been utilized in order to the rapid crystallization. But, the mechanism of excess Sb addition has not been clear, because a eutectic material is thought to cause the phase separation in its solidification process. Recently, it was reported that a melt-quenched crystalline states of eutectic AgInSbTe and SbTe with excess Sb has a quasi-equilibrium sate with single phase hexagonal structure based Sb(R3m) and some Sb atoms are randomly replaced with Te atoms. In this paper, we report the excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for AgInSbTe and Ge(Sb..Te₃)+Sb materials. From these analysis, it is clear that the crystallization is grown up in the boundary of amorphous-crystalline region of eutectic materials, which is different from the stoichiometric Ge₂Sb₂Te₅ media. Under favorable conditions, a self sustained (explosive) process results by laser irradiation. Then, once crystallization has been initiated in the amorphous-crystalline region, the entire amorphous films has been crystallized.

Citation Download Citation

Masahiro Okuda, Hirokazu Inaba, and Shouji Usuda "Crystallization in eutectic materials of phase-change optical memory", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); https://doi.org/10.1117/12.510288

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