Tool ranking using aberration measurements in a high-volume manufacturing facilility

Cesar M. Garza; Scott P. Warrick; Gary Stanley Seligman; Lena V. Zavyalova; Adrian van Zwol; James Foster

doi:10.1117/12.485428

26 June 2003 Tool ranking using aberration measurements in a high-volume manufacturing facility

Cesar M. Garza, Scott P. Warrick, Gary Stanley Seligman, Lena V. Zavyalova, Adrian van Zwol, James Foster

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485428
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The exposure tool is a critical enabler to continue improving the packing density and transistor speed in the semiconductor industry. In addition to increasing resolution (packing density) a scanner is also expected to provide tight control of the Across Chip Linewidth Variation, ACLV, (transistor speed). An important component of ACLV is lens aberrations. Techniques that measure in-situ the lens aberrations are now available. In a previous paper we reported good agreement between the first 25 Zernike coefficients measured in-situ using one of these techniques ARTEMIS and PMI (Phase Metrology Interferometry) data collected at the lens manufacturer. However questions have arisen as to the practicality of ARTEMIS, especially in view of its heavy reliance on a very large number of SEM images. We have measured the first 25 Zernike coefficients for 13 ASML 500/700 DUV Step & Scan systems in a high-volume wafer fab. In this paper we report on certain enhancements that were made to the best practice of ARTEMIS. We will also present a summary of the measurements taken and our first attempt to cluster the tools according to the aberrations measured.

Citation Download Citation

Cesar M. Garza, Scott P. Warrick, Gary Stanley Seligman, Lena V. Zavyalova, Adrian van Zwol, and James Foster "Tool ranking using aberration measurements in a high-volume manufacturing facility", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485428

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