Sensitivity of rinse, dry, and etch parameters

Sang-Kon Kim

doi:10.1117/12.485361

26 June 2003 Sensitivity of rinse, dry, and etch parameters

Sang-Kon Kim

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485361
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

For the nanoline formation, pattern collapse and etch process are the serious topics. In this study, after the descriptions of the rinse, dry, and etch processes, the pattern collapse model of pressures as the modified mechanical method and the etch model are described for dense and isolated lines. Simulation results have good agreement with the experimental results. The sensitivity of simulation parameters for feature sizes is described and analyzed by using the response surface model and neural networks. The most effective processes of pattern collapse are quantitatively shown as the rinse and dry processes in the chemically-amplified resists.

Citation Download Citation

Sang-Kon Kim "Sensitivity of rinse, dry, and etch parameters", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485361

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