Paper
26 June 2003 Detection of actual focus variations by focus automatic measurement
Daigo Hoshino, Takashi Yamauchi, Akira Watanabe, Toshio Onodera, Hidehiro Higashino
Author Affiliations +
Abstract
We developed a new focus monitoring method that is simple yet highly accurate. We used simple measurement tools: a conventional binary mask and an optical overlay inspection machine. Our method was sufficiently precise to detect sub-100nm focus errors, and we demonstrated that it had high focus sensitivity under various illuminations (NA, σ, and illumination aperture). We measured actual focus errors by KrF scanner processing and determined the extent of each, i.e., field curvature/astigmatism, wafer topography, and best focus stability.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daigo Hoshino, Takashi Yamauchi, Akira Watanabe, Toshio Onodera, and Hidehiro Higashino "Detection of actual focus variations by focus automatic measurement", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485353
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Calibration

Photomasks

Scanners

Optical inspection

Silicon

Inspection

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