Paper
26 June 2003 Contact-hole MEEF comparison between ALTA and 50-KeV written masks
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Abstract
Patterning of small contact holes has arisen as one of the principal challenges in all of semiconductor lithography. It has been established that the wafer print CD of a contact is related to the effective area of the contact hole on the mask, and that area MEEF values for 130 nm node contact holes utilizing 248 nm lithography can exceed 4.0. As such, there is strong motivation to ensure the best possible reticle level CD control. The move to 50KeV mask write processes has been accompanied by improvements in across reticle CD control. This paper will compare the wafer level printing performance, including area MEEF, for contact reticles written with 50KeV vector scan versus ALTA laser write tools. The results suggest that conventional mask specifications based upon a "CD" measurement are insufficient and that area based metrology is required.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Sturtevant, Juliann Opitz, and James C. Word "Contact-hole MEEF comparison between ALTA and 50-KeV written masks", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485494
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Semiconducting wafers

Critical dimension metrology

Reticles

Lithography

Chromium

Metrology

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