Novel materials for 157-nm bilayer resist designs

Stephanie J. Dilocker; Sanjay Malik; Binod B. De

doi:10.1117/12.485207

12 June 2003 Novel materials for 157-nm bilayer resist designs

Stephanie J. Dilocker, Sanjay Malik, Binod B. De

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485207
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Absorbance data on a variety of silicon-containing monomers are reported at 157nm. Choice of appropriate silicon monomers led to a second-generation bilayer resist, which showed improved transparency over the first-generation silicon-derived hydroxystyrene based resist. Increasing the overall silicon content improved its transparency and O₂ etch properties. The second-generation bilayer resist demonstrated 80nm resolution for dense line/space pairs. No silicon outgassing or post-exposure film loss was observed upon 157nm exposure.

Citation Download Citation

Stephanie J. Dilocker, Sanjay Malik, and Binod B. De "Novel materials for 157-nm bilayer resist designs", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485207

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available