Impact of thin resist processes on post-etch LER

Arpan P. Mahorowala; Dario L. Goldfarb; Karen Temple; Karen E. Petrillo; Dirk Pfeiffer; Katherina Babich; Marie Angelopoulos; Gregg M. Gallatin; Stacy Rasgon; Herbert H. Sawin; Scott D. Allen; Robert N. Lang; Margaret C. Lawson; Ranee W. Kwong; Kuang-Jung Chen; Wenjie Li; Pushkara Rao Varanasi; Martha I. Sanchez; Hiroshi Ito; Gregory M. Wallraff; Robert D. Allen

doi:10.1117/12.485168

12 June 2003 Impact of thin resist processes on post-etch LER

Arpan P. Mahorowala, Dario L. Goldfarb, Karen Temple, Karen E. Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg M. Gallatin, Stacy Rasgon, Herbert H. Sawin, Scott D. Allen, Robert N. Lang, Margaret C. Lawson, Ranee W. Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Rao Varanasi, Martha I. Sanchez, Hiroshi Ito, Gregory M. Wallraff, Robert D. Allen

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485168
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

While evaluating 193 nm, and early versions of 157 nm and EUV resists, the lithography community has focused on post-develop LER values derived from image analysis of top-down SEM micrographs. These numbers, however, do not capture the tendency of a resist to facet and roughen during plasma etching processes. They also do not convey any information about the role of the anti-reflective coatings/hard masks in the transfer of resist roughness into the underlying substrate. From a manufacturing perspective, it is the "LER" of the final etched substrate that is more important. This paper systematically studies the impact of resist polymer platform and thickness, etching conditions, and presence of organic and inorganic anti-reflective coatings/hard masks on substrate roughening. An AFM technique, previously developed by Reynolds and Taylor, is used to measure the feature sidewall roughness as a function of etch depth. This technique enables us to calculate the sidewall roughness of the resist, ARC/hard mak and substrate surfaces simultaneously, and determine correlations that may exist between these values. The paper identifies and demonstrates patterning methodologies that can be used to achieve "smooth" substrate surfaces even when the resist is "thin".

Citation Download Citation

Arpan P. Mahorowala, Dario L. Goldfarb, Karen Temple, Karen E. Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg M. Gallatin, Stacy Rasgon, Herbert H. Sawin, Scott D. Allen, Robert N. Lang, Margaret C. Lawson, Ranee W. Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Rao Varanasi, Martha I. Sanchez, Hiroshi Ito, Gregory M. Wallraff, and Robert D. Allen "Impact of thin resist processes on post-etch LER", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485168

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available