Bilayer technology for ArF and F2 lithography: the development of resists to minimize silicon outgassing

George G. Barclay; Subbareddy Kanagasabapathy; Gerd Pohlers; Joseph Mattia; Kao Xiong; Sheri L. Ablaza; James F. Cameron; Tony Zampini; Tao Zhang; Shintaro Yamada; Francois Huby; Kenneth Wiley

doi:10.1117/12.485141

12 June 2003 Bilayer technology for ArF and F₂ lithography: the development of resists to minimize silicon outgassing

George G. Barclay, Subbareddy Kanagasabapathy, Gerd Pohlers, Joseph Mattia, Kao Xiong, Sheri L. Ablaza, James F. Cameron, Tony Zampini, Tao Zhang, Shintaro Yamada, Francois Huby, Kenneth Wiley

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485141
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

This paper reports on the development of advanced bilayer resists for ArF and F₂ lithography. Contamination of the optics with silicon has been identified as a major issue for the adoption of bilayer technology across all wavelengths. An investigation was carried out to fundamentally understand the effect of the polymer architecture on silicon outgassing. A laser outgassing system was developed and calibrated using model silicon compounds. Model polymers where prepared in which the silicon was incorporated in a number of different ways pendant to the polymer backbone and in the polymer backbone. It was observed that the placement of silicon into the polymer backbone as a poly(silsesquioxane), allows the incorporation of high silicon content for superior etch resistance, with no detectable outgassing of silicon during the exposure step. The design concepts used for these ultra thin silicon imaging systems has resulted in superior imaging capability, resolving sub 100nm dense patterns.

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George G. Barclay, Subbareddy Kanagasabapathy, Gerd Pohlers, Joseph Mattia, Kao Xiong, Sheri L. Ablaza, James F. Cameron, Tony Zampini, Tao Zhang, Shintaro Yamada, Francois Huby, and Kenneth Wiley "Bilayer technology for ArF and F₂ lithography: the development of resists to minimize silicon outgassing", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485141

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