Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography

Sungeun Hong; Yusuke Takano; Takashi Kanda; Takanori Kudo; Munirathna Padmanaban; Hatsuyuki Tanaka; Si-Hyeung Lee; Jung-Hyeon Lee; Sang-Gyun Woo

doi:10.1117/12.485155

12 June 2003 Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography

Sungeun Hong, Yusuke Takano, Takashi Kanda, Takanori Kudo, Munirathna Padmanaban, Hatsuyuki Tanaka, Si-Hyeung Lee, Jung-Hyeon Lee, Sang-Gyun Woo

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485155
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The controllability of iso-dense bias generated by 193nm lithography was intensively studied with novel RELACS material. The shrinkage, shrinkage linearity, and shrinkage bias were considerably relied on MB temperature. It is the most powerful technology that changing of mixing bake (MB) temperature can control iso-dense bias. Furthermore, AZ Exp.R600 has several attractive advantages, which are able to improve LWS, LER, sidewall roughness of contact holes, surface roughness, and side lobe. Moreover, we have successfully developed a novel RELACS material to be applied for the patterning of sub-70nm contact hole.

Citation Download Citation

Sungeun Hong, Yusuke Takano, Takashi Kanda, Takanori Kudo, Munirathna Padmanaban, Hatsuyuki Tanaka, Si-Hyeung Lee, Jung-Hyeon Lee, and Sang-Gyun Woo "Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485155

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