Adaptability and validity of thin organic bottom antireflective coating (BARC) to sub-90-nm patterning in ArF lithography

Si-Hyun Kim; Si-Hyeung Lee; Gi-Sung Yeo; Jeong Hyeong Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon

doi:10.1117/12.485117

12 June 2003 Adaptability and validity of thin organic bottom anti-reflective coating (BARC) to sub-90-nm patterning in ArF lithography

Si-Hyun Kim, Si-Hyeung Lee, Gi-Sung Yeo, Jeong Hyeong Lee, Han-Ku Cho, Woo-Sung Han, Joo-Tae Moon

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485117
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The introduction of ArF lithography in device manufacturing has been studied with a low k1-factor. There are a number of issues that must be resolved to ensure the successful implementation of this technology. Such issues include the reduction in resist thickness and organic bottom anti-reflective coating (BARC) due to the characteristics of ArF resist with lower etch resistance in comparison with that of KrF. Requirements of a suitable high-performance of thin organic BARC material include chemical reactions with sub-layer, simulation for the minimization of reflectance, faster etch rate, and compatibility with resist. The optimum refractive index (n) and the extinction coefficient (k) of thin organic BARC are simulated to match the optical properties of substrates. These values are satisfied with the reflectance less than 2% at 1^st minimum. In the case of SiN sub-layer with acid absorption capability, it is confirmed that the chemical reaction with thin organic BARC has an effect on line edge roughness (LER) and pattern profile. Also, the degree of these effects is dependent upon the acidity of thin organic BARC. In this paper, it is shown that the application of thin organic BARC to sub-90nm patterning in ArF lithography is very feasible and adaptable in the view of lithographic and etch performance.

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Si-Hyun Kim, Si-Hyeung Lee, Gi-Sung Yeo, Jeong Hyeong Lee, Han-Ku Cho, Woo-Sung Han, and Joo-Tae Moon "Adaptability and validity of thin organic bottom anti-reflective coating (BARC) to sub-90-nm patterning in ArF lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485117

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