Proximity effect correction on multilevel interconnect metal for high-energy electron-beam lithography

Shunko Magoshi; Shinji Sato; Kazuo Tawarayama; Yasuhiro Makino; Hiromi Niiyama

doi:10.1117/12.483741

16 June 2003 Proximity effect correction on the multilevel interconnect metal for high-energy electron-beam lithography

Shunko Magoshi, Shinji Sato, Kazuo Tawarayama, Yasuhiro Makino, Hiromi Niiyama

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.483741
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In the application of the high-energy electron-beam (e-beam) lithogrpahy to the multi-level interconnect metal; the backscattered electron from the heavy metal previously patterned in lower levels on the substrate causes a significant proximity effect. We estimated the "inter-level" proximity effect in the e-beam exposure with the accelerating voltage of 50kV on some multi-level interconnect metal structures which consist in aluminum wiring and tungsten plugs. It was found that the backscattering range and the backscattering energy ratio to the incident energy depend not only on the density and thickness of metal but also on the distance between the resist and the heavy metal plugs. In this paper, a novel proximity effect correction algorithm is proposed, where the exposing patterns are divided into some classes according to the metal structure, the total backscattering energy deposited in the resist is expressed by the sum of the backscattering energy from each structural class, and the exposrue dose is modulated by the function of the total backscattering energy.

Citation Download Citation

Shunko Magoshi, Shinji Sato, Kazuo Tawarayama, Yasuhiro Makino, and Hiromi Niiyama "Proximity effect correction on the multilevel interconnect metal for high-energy electron-beam lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.483741

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