Paper
16 June 2003 Mix and match capability of e-beam direct-write for the 65-nm technology
Yves Laplanche, Murielle Charpin, Laurent Pain, J. Todeschini, Daniel Henry, Pierre-Olivier Sassoulas, S. Gough, Ulf Weidenmueller, Peter Hahmann
Author Affiliations +
Abstract
An easy way to pattern 65nm CD target, when optical lithography technology is not available, is to use an Electron Beam Direct Write tool (EBDW), which is well known for its high resolution patterning potentials, with the drawback of a very low throughput. Emerging techniques of electron projection lithography also propose the same patterning capability with enhanced throughput. One of the most crucial issues, when dealing with integration, is the overlay capability of the systems. This paper exposes the studies made on the overlay capability issue of the LEICA EBDW installed in STMicroelectronics (STM) production plant in Crolles (France) and proves our tool is ready to support the 65nm node technology development.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yves Laplanche, Murielle Charpin, Laurent Pain, J. Todeschini, Daniel Henry, Pierre-Olivier Sassoulas, S. Gough, Ulf Weidenmueller, and Peter Hahmann "Mix and match capability of e-beam direct-write for the 65-nm technology", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.482342
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Scanners

Optical alignment

Electron beam direct write lithography

Distortion

Overlay metrology

Electron beam lithography

Back to Top