Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node

Hiroyuki Nakano; Shinichiro Nohdo; Kumiko Oguni; Tomonori Motohashi; Masaki Yoshizawa; Tetsuya Kitagawa; Shigeru Moriya

doi:10.1117/12.484429

16 June 2003 Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node

Hiroyuki Nakano, Shinichiro Nohdo, Kumiko Oguni, Tomonori Motohashi, Masaki Yoshizawa, Tetsuya Kitagawa, Shigeru Moriya

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484429
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Imaging capabilities of low-energy electron-beam proximity-projection lithography (LEEPL) are discussed focusing mainly on the hole patterns for chemically amplified resist. LEEPL needs a multi-layer process with a resist layer less than 100 nm thick. To achieve the imaging performance of the 65nm node, we optimized intermediate spin-on-glass layer and top-layer resist, which were selected carefully. 80 nm hole patterns were achieved with 10% exposure latitude, and current imaging position and 45 nm node positions were investigated using σQBP. σQBP was improved from 64.5 nm to 48.9 nm.

Citation Download Citation

Hiroyuki Nakano, Shinichiro Nohdo, Kumiko Oguni, Tomonori Motohashi, Masaki Yoshizawa, Tetsuya Kitagawa, and Shigeru Moriya "Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484429

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