Paper
16 June 2003 Advanced patterning studies using shaped e-beam lithography for 65-nm CMOS preproduction
Laurent Pain, Murielle Charpin, Yves Laplanche, David Herisson, J. Todeschini, Ramiro Palla, A. Beverina, H. Leininger, S. Tourniol, M. Broekaart, Emmanuelle Luce, F. Judong, K. Brosselin, Y. Le Friec, F. Leverd, S. Del Medico, V. De Jonghe, Daniel Henry, M. P. Woo, F. Arnaud
Author Affiliations +
Abstract
With the objective to ramp-up 65 nm CMOS production in early 2005, preliminary works have to start today to develop the basic technological in order to be correctly prepared. In the absence of commercial advanced 193 nm scanners compatible with these aggressive design rules, electron beam technology was employed for the realization of a first 6-T SRAM cell of a size of 0.69 μm2. This paper highlights the work performed to integrate E-beam lithography in this first 65 nm CMOS process flow.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Pain, Murielle Charpin, Yves Laplanche, David Herisson, J. Todeschini, Ramiro Palla, A. Beverina, H. Leininger, S. Tourniol, M. Broekaart, Emmanuelle Luce, F. Judong, K. Brosselin, Y. Le Friec, F. Leverd, S. Del Medico, V. De Jonghe, Daniel Henry, M. P. Woo, and F. Arnaud "Advanced patterning studies using shaped e-beam lithography for 65-nm CMOS preproduction", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.482336
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Electron beam lithography

Lithography

Semiconducting wafers

Optical alignment

Photomasks

Chemistry

Back to Top