Double heterojunction bipolar phototransistor model

Michal Horak

doi:10.1117/12.498453

8 July 2003 Double heterojunction bipolar phototransistor model

Michal Horak

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498453
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

An analytical mathematical model of the double heterojunction NpN bipolar phototransistor with abrupt heterojunctions in three terminal configuration is presented. The thermionic-filed emission and diffusion of injected carriers is considered and the Ebers-Moll type relations for the collector and emitter current are obtained. Several steady state characteristics of the phototransistor structure are calculated (optical gain, quantum efficiency, responsivity).

Citation Download Citation

Michal Horak "Double heterojunction bipolar phototransistor model", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498453

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