PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Variations in the lattice constant of Ge film were determined by RHEED in the course of the MBE film growth on the silicon surface. Oscillations of the in-plane atomic cell constant were observed for the Ge film growing according to the 2D mechanism. Variations in the two-dimensional lattice constant at the stage of 2D growth are caused by elastic deformation of edges of two-dimensional islands. It was shown that the germanium film growth on silica, unlike the growth on the pure silicon surface, proceeds without formation of the wetting layer.
Alexander I. Nikiforov,V. A. Cherepanov, andOleg P. Pchelyakov
"Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510552
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Alexander I. Nikiforov, V. A. Cherepanov, Oleg P. Pchelyakov, "Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces," Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510552