Paper
11 June 2003 Resonant broadening of two-dimensional state in semiconductors with inverted band structure
Alexander V. Germanenko, Grigori M. Minkov, V. A. Larionova, O. E. Rut
Author Affiliations +
Abstract
Results of tunneling studies of MOS-structures based on Hg1-xCdxTe with an inverted band structure are reported. It has been found that the 2D states have revealed themselves at negative energies, when they are in resonance with the heavy hole valence band of bulk material. To interpret the experimental data the energy spectrum and broadening of the 2D states in a surface quantum well has been theoretically investigated in the framework of the Kane model, the finite value of the heavy hole effective mass has been taken into account.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Germanenko, Grigori M. Minkov, V. A. Larionova, and O. E. Rut "Resonant broadening of two-dimensional state in semiconductors with inverted band structure", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514613
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductors

Magnetism

Data modeling

Quantum wells

Spectroscopy

Neodymium

Physics

Back to Top