Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots

P. N. Brunkov; A. Patane; A. Levin; Laurence Eaves; P. C. Main; Yu G. Musikhin; Boris V. Volovik; Alexey E. Zhukov; Victor M. Ustinov; S. G. Konnikov

doi:10.1117/12.513859

11 June 2003 Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots

P. N. Brunkov, A. Patane, A. Levin, Laurence Eaves, P. C. Main, Yu G. Musikhin, Boris V. Volovik, Alexey E. Zhukov, Victor M. Ustinov, S. G. Konnikov

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513859
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Photocurrent and capacitance spectroscopy are used to investigate a Schottky barrier structure containing a single layer of self-organized InAs/GaAs quantum dots. We show that the temperature dependence of the photocurrent signal from the quantum dots is governed by thermal escape of electrons as the faster carriers.

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P. N. Brunkov, A. Patane, A. Levin, Laurence Eaves, P. C. Main, Yu G. Musikhin, Boris V. Volovik, Alexey E. Zhukov, Victor M. Ustinov, and S. G. Konnikov "Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513859

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