Control of charge and spin in novel semiconductor nanostructure devices

Gerhard Abstreiter

doi:10.1117/12.510419

11 June 2003 Control of charge and spin in novel semiconductor nanostructure devices

Gerhard Abstreiter

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.510419
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Semiconductor nanostructures have attracted a lot of interest recently due to their possible applications in optoelectronics, nanoelectronics, quantum information processing and chemical/biological sensing. There are many different experimental approaches to realize well controllable nanostructure devices. In the past few years we have concentrated our efforts on the fabrication of such devices based on two methods, cleaved edge overgrowth and self-assembly of quantum dots.

Citation Download Citation

Gerhard Abstreiter "Control of charge and spin in novel semiconductor nanostructure devices", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510419

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