Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band

Chia-Wei Tsai; Yu-Chia Chang; Gagik Sh. Shmavonyan; Yi-Shin Su; Ching-Fuh Lin

doi:10.1117/12.474821

17 June 2003 Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band

Chia-Wei Tsai, Yu-Chia Chang, Gagik Sh. Shmavonyan, Yi-Shin Su, Ching-Fuh Lin

Proceedings Volume 4989, Optical Devices for Fiber Communication IV; (2003) https://doi.org/10.1117/12.474821
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Asymmetric active layer structure is used for the broadband purpose. Using InP substrate with five 60Å InGaAsP quantum wells and two 150Å InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250nm to 1650nm.

Citation Download Citation

Chia-Wei Tsai, Yu-Chia Chang, Gagik Sh. Shmavonyan, Yi-Shin Su, and Ching-Fuh Lin "Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band", Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); https://doi.org/10.1117/12.474821

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