SU-8-based deep x-ray lithography/LIGA

Linke Jian; Yohannes M. Desta; Jost Goettert; Martin Bednarzik; Bernd Loechel; Yoonyoung Jin; Georg Aigeldinger; Varshni Singh; Gisela Ahrens; Gabi Gruetzner; Ralf Ruhmann; Reinhard Degen

doi:10.1117/12.478246

15 January 2003 SU-8 based deep x-ray lithography/LIGA

Linke Jian, Yohannes M. Desta, Jost Goettert, Martin Bednarzik, Bernd Loechel, Yoonyoung Jin, Georg Aigeldinger, Varshni Singh, Gisela Ahrens, Gabi Gruetzner, Ralf Ruhmann, Reinhard Degen

Author Affiliations +

Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.478246
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

Poly-methylmethacrylate (PMMA), a positive resist, is the most commonly used resist for deep X-ray lithography (DXRL)/LIGA technology. Although PMMA offers superior quality with respect to accuracy and sidewall roughness but it is also extremely insensitive. In this paper, we present our research results on SU-8 as negative resist for deep X-ray lithography. The results show that SU-8 is over two order of magnitude more sensitive to X-ray radiation than PMMA and the accuracy of the SU-8 microstructures fabricated by deep X-ray lithography is superior to UV-lithography and comparable to PMMA structures. The good pattern quality together with the high sensitivity offers rapid prototyping and direct LIGA capability. Moreover, the combinational use of UV and X-ray lithography as well as the use of positive and negative resists made it possible to fabricate complex multi-level 3D microstructures. The new process can be used to fabricate complex multi-level 3D structures for MEMS, MOEMS, Bio-MEMS or other micro-devices.

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Linke Jian, Yohannes M. Desta, Jost Goettert, Martin Bednarzik, Bernd Loechel, Yoonyoung Jin, Georg Aigeldinger, Varshni Singh, Gisela Ahrens, Gabi Gruetzner, Ralf Ruhmann, and Reinhard Degen "SU-8 based deep x-ray lithography/LIGA", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); https://doi.org/10.1117/12.478246

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