Paper
13 November 2002 Selective semiconductor gas sensor based on surface photovoltage
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Proceedings Volume 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems; (2002) https://doi.org/10.1117/12.476101
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia
Abstract
The work function of tin oxide has been studied by the kelvin probe method as a function of the exposure to different gaseous species. Characterisation has been performed in dark and in presence of sub band and supra band gap light (Surface Photovoltage measurements). The light changes the response towards gases in particular at room temperature. The results foresee the possibility to improve semiconductor sensor selectivity by using monochromatic light at well defined frequency able to activate/deactivate surface states where species are adsorbed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guido Faglia, Camilla Baratto, Elisabetta Comini, and Giorgio Sberveglieri "Selective semiconductor gas sensor based on surface photovoltage", Proc. SPIE 4936, Nano- and Microtechnology: Materials, Processes, Packaging, and Systems, (13 November 2002); https://doi.org/10.1117/12.476101
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Cited by 2 scholarly publications.
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KEYWORDS
Semiconductors

Oxides

Tin

Thin films

Adsorption

Gas sensors

Oxygen

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