Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD

Deheng Zhang; Yunyan Liu

doi:10.1117/12.483109

17 September 2002 Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD

Deheng Zhang, Yunyan Liu

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483109
Event: Photonics Asia, 2002, Shanghai, China

Abstract

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long.

Citation Download Citation

Deheng Zhang and Yunyan Liu "Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483109

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