Influence of N-type DBR on characteristics of VCSEL

Guofeng Xin; Hongdong Zhao; Guoying Chen; Hongyun Xie; Lixin Liu; Cunshan Zhang; XiaoFeng Duan

doi:10.1117/12.482236

5 September 2002 Influence of N-type DBR on characteristics of VCSEL

Guofeng Xin, Hongdong Zhao, Guoying Chen, Hongyun Xie, Lixin Liu, Cunshan Zhang, XiaoFeng Duan

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482236
Event: Photonics Asia, 2002, Shanghai, China

Abstract

In this paper, a quasi-three-dimension theoretical model for the Vertical-Cavity Surface-Emitting Laser with oxide-confined layers is showed. The distributions of the equal-potential line, injected current density, carrier concentration and the optical field distribution in the cavity are calculated self-consistently by the finite difference method. The influences of the light output window's radius and oxide-confined layers window's radius are studied. At the same time, we study the influence of the N-type DBR on some characteristics of the VCSEL. The results show that there would be a large difference with practical VCSEL ifthe N-type DBR layers were neglected.

Citation Download Citation

Guofeng Xin, Hongdong Zhao, Guoying Chen, Hongyun Xie, Lixin Liu, Cunshan Zhang, and XiaoFeng Duan "Influence of N-type DBR on characteristics of VCSEL", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482236

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