Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer

Andreas Erdmann; Christian K. Kalus

doi:10.1117/12.530047

19 November 2003 Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer

Andreas Erdmann, Christian K. Kalus

Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.530047
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy

Abstract

Lithographic exposures belong to the most critical process steps in the manufacturing of microelectronic circuits. Almost all exposures are performed over nonplanar wafers. The backscattering of light from topographic features on these wafers is of increasing concern for the accuracy and stability of lithographic processes. We combine standard imaging theory and finite-difference time-domain (FDTD) algorithms to simulate several typical geometries. Consequences with respect to typical lithographic process parameters are discussed.

Citation Download Citation

Andreas Erdmann and Christian K. Kalus "Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.530047

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