Paper
30 January 2003 Self-consistent calculation of electronic states in heterostructure devices
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Abstract
Electronic states inside heterostructure devices are accurately calculated by using an efficient scheme. The scheme is based on self-consistent solution of Schroedinger’s equation (using variational technique) together with Poisson’s equation. The model is applied to in one dimensional heterostructure FET to determine its characteristics. The model is then extended in two-dimensions to determine the electronic states in low-dimensional heterostructure devices and quantum wires. The advantages and limitations of the present scheme are finally discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ossama A. Abo-Elnor "Self-consistent calculation of electronic states in heterostructure devices", Proc. SPIE 4793, Mathematics of Data/Image Coding, Compression, and Encryption V, with Applications, (30 January 2003); https://doi.org/10.1117/12.463650
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KEYWORDS
Heterojunctions

Gallium arsenide

Instrument modeling

Communication engineering

Field effect transistors

Ions

Transparency

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