Paper
10 January 2003 Measurements of the quantum efficiency and depletion depth in gallium-arsenide detectors
Christian Erd, Alan Owens, G. Brammertz, David H. Lumb, Marcos Bavdaz, Anthony J. Peacock, Seppo Arvo Anter Nenonen, Hans Andersson
Author Affiliations +
Abstract
Measurements of quantum efficiencies are presented for three epitaxial gallium arsenide detectors with nominal depletion depths of 40, 325, and 400 μm. Attempts to measure the depletion as a function of bias indicated that the apparent depletion depth was much less than the intrinsic layer thickness. Expectation that the of the detection efficiency could be increased using a larger intrinsic layer could not be met. The largest value of a depletion depth measured by X-rays was determined at about 100 μm for the 400 μm device.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Erd, Alan Owens, G. Brammertz, David H. Lumb, Marcos Bavdaz, Anthony J. Peacock, Seppo Arvo Anter Nenonen, and Hans Andersson "Measurements of the quantum efficiency and depletion depth in gallium-arsenide detectors", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.451168
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Sensors

Quantum efficiency

X-rays

Gallium arsenide

Semiconducting wafers

Absorption

Energy efficiency

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