IR imaging of integrated circuit power transistors during operation

Hsin Wang; Ralph B. Dinwiddie; H. Maleki; J. Oglesbee; C. Thougsouk

doi:10.1117/12.459555

15 March 2002 IR imaging of integrated circuit power transistors during operation

Hsin Wang, Ralph B. Dinwiddie, H. Maleki, J. Oglesbee, C. Thougsouk

Proceedings Volume 4710, Thermosense XXIV; (2002) https://doi.org/10.1117/12.459555
Event: AeroSense 2002, 2002, Orlando, FL, United States

Abstract

An infrared microscope was used to study the surface temperature profiles of power transistor arrays in integrated circuits (IC) during operation. Each transistor array was set to conduct current for 20-50 microseconds. The integration time of the IR camera is adjusted to be between 2 and 10 microseconds. A thorough study of the camera's timing characteristics allows its precise synchronization to transient thermal events in the transistor arrays. Progressively adding incremental delay times to the synchronization pulses allows the complete characterization of the thermal transients as a function of time and location. The IR microscope timing characteristics were determined by imaging an incandescent lamp filament during pulsed operation. Examples of heat pulses in a lamp filament and power transistors are given.

Citation Download Citation

Hsin Wang, Ralph B. Dinwiddie, H. Maleki, J. Oglesbee, and C. Thougsouk "IR imaging of integrated circuit power transistors during operation", Proc. SPIE 4710, Thermosense XXIV, (15 March 2002); https://doi.org/10.1117/12.459555

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