Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-um DRAM technology

Yuping Cui; Franz X. Zach; Shahid A. Butt; Wai-Kin Li; Bernhard Liegl; Lars W. Liebmann

doi:10.1117/12.474618

30 July 2002 Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-μm DRAM technology

Yuping Cui, Franz X. Zach, Shahid A. Butt, Wai-Kin Li, Bernhard Liegl, Lars W. Liebmann

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474618
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Two full-chip OPC approaches, a traditional rule-based approach and a more recent model-based approach are compared on DRAM applications using both ArF and KrF lithography, with off-axis illumination and phase shift masks. The similarities and differences between these two OPC approaches are compared in detail with selected one- and two-dimensional layout situations. Our results from the model-based approach show good line width control for one- dimensional structures and improved line-end printing for two-dimensional structures; however, results also show severe process window limitations for some layouts. The cause of the process window limitations with the model-based approach are discussed. To address the process window limitations in the model-based approach, a rule-based pre- correction was used to ensure adequate process window at deviated dose and focus conditions. With pre-correction combined with the model-based approach, our wafer data shows good correction quality and process window.

Citation Download Citation

Yuping Cui, Franz X. Zach, Shahid A. Butt, Wai-Kin Li, Bernhard Liegl, and Lars W. Liebmann "Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-μm DRAM technology", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474618

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