Amine gradient process for 157-nm lithography

Jae Chang Jung; Keun-Kyu Kong; Young-Sun Hwang; Kyu-Dong Park; Sung-Koo Lee; Geunsu Lee; Jin-Soo Kim; Ki-Soo Shin

doi:10.1117/12.474220

24 July 2002 Amine gradient process for 157-nm lithography

Jae Chang Jung, Keun-Kyu Kong, Young-Sun Hwang, Kyu-Dong Park, Sung-Koo Lee, Geunsu Lee, Jin-Soo Kim, Ki-Soo Shin

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474220
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

To accomplish minimizing feature size to sub 70nm, 157nm photolithography becomes a strong candidate as a new lithographic technology. However, there is a strong need for new photoresists, which are transparent to 157nm light sources. To have a transparency for 157nm light source, fluorinated organic polymers are studied intensively. As a result, there are some of polymers that have absorbance of 2/micrometers . However, in spite of this low absorbance of 2micrometers , resist profile simulation tells us bulk slope problems. TO obtain more than 85 degree of resist pattern profile, the absorbance of resist must be 1.2micrometers . The absorbance of 1.2micrometers is very difficult target to accomplish. To overcome this light absorption problem, we have developed amine gradient resist process (AGRP) which gives an amine gradient in photoresist and can make a vertical profile though the resist has poor transparency to light source. By adding chromophore that absorbs 193nm wavelength, we made model ArF resists of which absorbances were from 1.2micrometers to 4micrometers . By patterning experiment using these model resists and 193nm scanner, we could confirm that the resist absorbance should be lower than 1.2micrometers to obtain vertical profile pattern at the resist thickness of 150nm. But if we use AGRP, the absorbance of 2.5micrometers will be enough value for the vertical profile pattern. So we could conclude that by combining 157nm resists and amine gradient process, resist absorbance problem in 157nm photolithography could be solved. We also studied for the resist properties that were suitable for AGRP.

Citation Download Citation

Jae Chang Jung, Keun-Kyu Kong, Young-Sun Hwang, Kyu-Dong Park, Sung-Koo Lee, Geunsu Lee, Jin-Soo Kim, and Ki-Soo Shin "Amine gradient process for 157-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474220

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KEYWORDS

Absorbance

Photoresist materials

Polymers

Lithography

Scanning electron microscopy

Optical lithography

Diffusion

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