Rotating compensator spectroscopic ellipsometry for line-width control

Ha-Young Lee; Kyoung-Yoon Bang; Jaeho Lee; Heungin Bak; Young-Soo Sohn; Ilsin An

doi:10.1117/12.473509

16 July 2002 Rotating compensator spectroscopic ellipsometry for line-width control

Ha-Young Lee, Kyoung-Yoon Bang, Jaeho Lee, Heungin Bak, Young-Soo Sohn, Ilsin An

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473509
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Rotating compensator spectroscopic ellipsometry (RCSE) was applied to the characterization of line-width in deep UV photoresist films. Variation of line-width in few nm was distinguishable by comparing the features in conventional ellipsometry parameters or the degree of polarization spectra obtainable form RCSE. The variations in the former spectra were caused by the density change in patterned PR films. Meanwhile, the variations in latter spectra wee caused by the surface profile of the film. Once the spectral positions of the features were related to the result of CD- SEM, both spectra could be used to estimate the line-width of patterned PR without in-depth analysis. Further, when uniaxial anisotropy was assumed for the film, the line-width could be roughly deduced in the process of extracting the optical properties of film via an effective medium approximation.

Citation Download Citation

Ha-Young Lee, Kyoung-Yoon Bang, Jaeho Lee, Heungin Bak, Young-Soo Sohn, and Ilsin An "Rotating compensator spectroscopic ellipsometry for line-width control", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473509

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KEYWORDS

Ellipsometry

Polarization

Polarizers

Spectroscopic ellipsometry

Dielectric polarization

Dielectrics

Optical lithography

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