Monte Carlo simulation of SEM for target with complex geometry

Vadim Manuylov

doi:10.1117/12.473529

16 July 2002 Monte Carlo simulation of SEM for target with complex geometry

Vadim Manuylov

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473529
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

SEM is a powerful tool to analyze a non-planar surface using back-scattered (BS) and/or transmitted (TR) electrons. When an incident beam is scanned over a target surface, both BS and TR yields vary depending on the target topology. Determining the correspondence between the yield level and the exact position of target edges is one of the main tasks of SEM analysis. A generic solution can not be achieved due to the non-local character of electron yields and the effects of actual beam size and non-perfect edges of the target elements, together with other fine effects. However, computing experiments using Monte Carlo based simulations allow investigation of effects due to different target elements on the yield level for specific conditions1,2. Moreover, simulation of the beam scanning can be very useful for 'reconstruction' of the geometry from electron yield. This paper presents a Monte Carlo based SEM simulator and analyzes the results obtained. An approach to accurately localize target edge features is proposed.

Citation Download Citation

Vadim Manuylov "Monte Carlo simulation of SEM for target with complex geometry", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473529

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