Carbon nanotube scanning probe for surface profiling of DUV and 193-nm photoresist pattern

Cattien V. Nguyen; Ramsey M.D. Stevens; Jabulani Barber; Jie Han; Meyya Meyyappan; Martha I. Sanchez; Carl E. Larson; William D. Hinsberg

doi:10.1117/12.473506

16 July 2002 Carbon nanotube scanning probe for surface profiling of DUV and 193-nm photoresist pattern

Cattien V. Nguyen, Ramsey M.D. Stevens, Jabulani Barber, Jie Han, Meyya Meyyappan, Martha I. Sanchez, Carl E. Larson, William D. Hinsberg

Author Affiliations +

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473506
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The continental scaling down of CMOS feature size to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscopy coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon-nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon-nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable resolution of steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

Citation Download Citation

Cattien V. Nguyen, Ramsey M.D. Stevens, Jabulani Barber, Jie Han, Meyya Meyyappan, Martha I. Sanchez, Carl E. Larson, and William D. Hinsberg "Carbon nanotube scanning probe for surface profiling of DUV and 193-nm photoresist pattern", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473506

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