Paper
1 July 2002 Pattern printability for off-axis incident light in EUV lithography
Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, Shinji Okazaki
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Abstract
Off-axis incident light produces shadowing and an imbalance in the diffracted light. Shadowing causes a change in the critical dimension (CD) and a shift in the position of patterns due to the swing + bulk effect of the absorber and buffer layers. In addition, the imbalance in the diffracted light influences the optical proximity-effect correction (OPC) of actual patterns with a k1 below 0.6. In this study, the main factors influencing OPC were investigated. These include asymmetric aberrations and optical proximity effects (OPE) in line patterns. OPC was then applied to a T-shaped pattern. It is found that the mask error factor (MEF) in low-contrast regions of a layout is an important consideration in OPC.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, and Shinji Okazaki "Pattern printability for off-axis incident light in EUV lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472301
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Cited by 7 scholarly publications.
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KEYWORDS
Optical proximity correction

Critical dimension metrology

Photomasks

Extreme ultraviolet lithography

Nanoimprint lithography

Charge-coupled devices

Ruthenium

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