At-wavelength inspection of defect smoothing in EUVL masks

Moonsuk Yi; Min-Cheol Park; Paul B. Mirkarimi; Cindy C. Larson; Jeffrey Bokor

doi:10.1117/12.472314

1 July 2002 At-wavelength inspection of defect smoothing in EUVL masks

Moonsuk Yi, Min-Cheol Park, Paul B. Mirkarimi, Cindy C. Larson, Jeffrey Bokor

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472314
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Results of at-wavelength inspection of EUVL mask substrate defects that were smoothed by multilayer coatings are presented. Programmed mask substrate defects were made with 80nm gold (Au) spheres, which were deposited on the mask substrate before the Mo/Si reflective multilayer coating. After coating, at-wavelength and visible-light inspection were then performed. The smoothing process was found to be effective in significantly suppressing the EUV visibility of the defects.

Citation Download Citation

Moonsuk Yi, Min-Cheol Park, Paul B. Mirkarimi, Cindy C. Larson, and Jeffrey Bokor "At-wavelength inspection of defect smoothing in EUVL masks", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472314

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