Electron beam verification with an a-Si flat-panel electronic portal imaging device

Michele Aubin; Bruce Faddegon; Jean Pouliot

doi:10.1117/12.465599

3 May 2002 Electron beam verification with an a-Si flat-panel electronic portal imaging device

Michele Aubin, Bruce Faddegon, Jean Pouliot

Proceedings Volume 4682, Medical Imaging 2002: Physics of Medical Imaging; (2002) https://doi.org/10.1117/12.465599
Event: Medical Imaging 2002, 2002, San Diego, California, United States

Abstract

Portal images allow the physician to visualize and quantify the position of anatomical structures within the radiation field during the treatment of cancer with radiation therapy. In this project, we exploit the presence of the low intensity bremsstrahlung photons present in the electron beam, and the high sensitivity of the new technology of flat panel based on amorphous-silicon arrays to generate images of the electron beam treatment field. This opens the possibility of routine on-line electron beam treatment verification. A large-scale array of 1024 X 1024 pixels (41 x 41 cm2) was used to acquire images from electron beams with energies from 6 to 21 MeV. For each energy, a gain correction image was acquired to compensate for the bremsstrahlung angular dependence. Several integration time factors were tested to obtain verification images within 30 monitor units, a low number for treatments with electron beams. Images of the head sections of a Rando phantom with 50 MU or less were acquired. Anatomical structures present in the phantom are clearly seen. Parameters influencing the quality of images acquired with electron beams, such as the detector integration time and the beam energy will be discussed. Examples of clinical images acquired with electron beams will also be presented.

Citation Download Citation

Michele Aubin, Bruce Faddegon, and Jean Pouliot "Electron beam verification with an a-Si flat-panel electronic portal imaging device", Proc. SPIE 4682, Medical Imaging 2002: Physics of Medical Imaging, (3 May 2002); https://doi.org/10.1117/12.465599

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